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 BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW
Surface Mount Switching Multi-Chip Diode Array
P b Lead(Pb)-Free
MULTI-CHIP DIODES 150m AMPERES 75 VOLTS
Features: * For General Purpose Switching Applications * Fast Switching Speed * High Conductance * Easily Connected As Full Wave Bridge Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro)
65 1
4
2
3
SOT-363
SOT-363 Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
BC
1 2 3
D
E
H K J L M
Dim A B C D E H J K L M
Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25
WEITRON
hpp://www.weitron.com.tw
1/3
Rev.A 11-Aug-09
BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW
Maximum Ratings (TA=25C Unless otherwise noted)
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Recti ed Output Current(1,3) Non-Repetitive Forward Current @t=1.0s @t=1.0s Power Dissipation(1,3) Thermal Resistance, Junction to Ambient Air(1,3) Junction & Storage Temperature Range Symbol VRM VRRM VRM VR VR(RSM) IO IFSM PD RJA Tj,Tstg Value 100 Unit V
75 53 150 2.0 1.0 200 625 -65 to +150
V V mA A mW C/W C
Electrical Characteristics (TA=25C Unless otherwise noted)
Characteristic Reverse Breakdown Voltage(2) IR=2.5A Reverse Current(2) VR=75V VR=20V Forward Voltage(2) IF=1mA IF=10mA IF=50mA IF=150mA Total Capacitance (VR=0V, f=1.0MHz) Reverse Recover Time IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Symbol V (BR)R Min 75 Typ Max 2.5 25 715 855 1000 1250 2.0 4.0 Unit A A nA
IR
-
-
VF
-
-
mA
CD T rr
-
-
pF nS
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout,. 2. Short duration test pulse used to minimize self-heating effect. 3. One or more diodes loaded.
http://www.weitron.com.tw
WEITRON
2/3
Rev.A 11-Aug-09
BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW
Device Marking
Item BAV70DW BAV756DW BAV99BRW BAV99DW BAW567DW BAW56DW Marking KJA KCA KGJ KJG KAC KJC Eqivalent Circuit diagram
1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4
Typical Characteristics
IR, INSTATANEOUS REVERSE CURRENT (nA) IF, INSTATANEOUS FORWARD CURRENT (A) 1
10000 1000
TA = 150C TA = 125C TA = 75C
0.1
TA = 150C TA = 75C
100 TA = 25C 10 TA = 0C 1 TA = -40C
0.01
TA = 25C TA = 0C TA = -40C
0.001
0.1
1.0 0.5 1.5 0 VR, INSTANTANEOUS FORWARD VOLTAGE(V)
0
20
40
60
80
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig.1 Forward Characteristics
Fig.2 Typical Reverse Characteristics
CT, TOTAL CAPACITANCE (pF)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0
f = 1.0MHz
Pd, POWER DISSIPATION (wW)
2.0
250 200 150 100 50 0
10 20 30 VR, REVERSE VOLTAGE(V)
40
0
Fig.3 Typical Capacitance vs. Reverse Voltage
25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)
Fig.4 Power Derating Curve
http://www.weitron.com.tw
WEITRON
3/3
Rev.A 11-Aug-09


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